4
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
Figure 2. MRF8P20161HSR3 Test
Circuit Component Layout
MRF8P20160H
Rev. 1
C10
VGA
C8
R2
C6
C5
C3
C1
C2
C4
R1
Z1
VGB
C11
C9
R3
C7
C21 C23
VDB
C25
C19
C17
C13
C15
C14
C12
C16
C26
VDA
C20 C22
C24
C18
CUT OUT AREA
C
P
Table 5. MRF8P20161HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C12, C13
10 pF Chip Capacitors
ATC600F100JT250XT
ATC
C3
0.3 pF Chip Capacitor
ATC600F0R3BT250XT
ATC
C4, C5
1.1 pF Chip Capacitors
ATC600F1R1BT250XT
ATC
C6, C7, C18, C19
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C8, C9, C20, C21, C22, C23
10
μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10, C11
22
μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C14, C15
2.0 pF Chip Capacitors
ATC600F2R0BT250XT
ATC
C16, C17
2.2 pF Chip Capacitors
ATC600F2R2BT250XT
ATC
C24, C25
220
μF, 50 V Electrolytic Capacitors
227CKS505M
Illinois Cap
C26
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
R1
50
?, 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
8.25
?, 1/4 W Chip Resistors
CRCW12068R25FKEA
Vishay
Z1
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
GCS351--HYB1900
Soshin
PCB
0.020″,
εr
=3.5
RO4350B
Rogers
相关PDF资料
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相关代理商/技术参数
MRF8P20161HSR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20165WHR3 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20165WHR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20165WHSR3 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P20165WHSR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P23080HR3 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P23080HR5 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8P23080HSR3 功能描述:射频MOSFET电源晶体管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray